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HOME > Product > Chemical Mechanical Polishing  > CDP800 > CDP800 Precision CMP Equipment

CDP800 Precision CMP Equipment

• Suitable for 4 ",6" and 8 "wafers.
• The rotation rate of the polishing head is 0-150rpm, and the rotation rate of the polishing disc is 0-150rpm.
• 3 zone partition control.
• Automatic temperature monitoring, automatic cooling and automatic flushing can be realized.
• With optical/friction end point detection system.

  • Functional Feature Description
  • Technical Application
  • Equipment Parameter
    • • The equipment is flexible and can support a variety of Head.
      • The technological capability of the equipment is close to the mainstream model level of products of the same size.
      • Good process consistency between pieces of equipment.
      • 4-8 inch Si, TGV polishing and surface polishing of SIC, LT, GaAs and other compounds.
      • The polisher head equipped with this equipment is developed, designed and produced by our company.
      • Among them, the 4-inch 3-cavity Head is an original product of our company, which fills the gap that there is no multi-cavity 4-inch Head in China. Our company can quickly modify or customize the Head according to the characteristics of customers' products. For example, in the development of TGV flake (200um), our company modified the internal structure of Head to meet the needs of flake polishing. For example, during the development of OX polishing process on LN surface, our company upgraded the 8-inch Head deeply and successfully met the customer's product requirements.


       
    • • The equipment can be used in various CMP applications by using friction and optical endpoint detection methods.
      • The numb of pressurizing area of that polishing head is 3.
      • Four-inch, six-inch and eight-inch polishing heads, three polishing heads can be flexibly switched, which is helpful to realize wafer processing of different sizes.
      • Rotational speed stability ≤1rpm-100rpm.
      • High-precision air pressure control, our company integrates the international mainstream air pressure control module and our own research and development algorithm, which can realize high-precision air pressure control inside Polisher Head.
      • The adjustable pressure range of polishing head is 0.5-12psi.
      • High-precision control of rotation speed and acceleration and deceleration, and speed control during CMP operation also have an impact on products. We jointly developed a servo system for semiconductor CMP scene with well-known domestic motor suppliers and successfully applied it to our machine.




       
    • • High-beat machine scheduling scheme. In the design and planning of the machine, we formulated the high-beat operation scheme of the machine, and the project was implemented in accordance with the high-beat operation scheme.
      • The equipment has strong process capability and can provide customers with overall process solutions. Our company has been working in the field of CMP polishing for many years, with a complete process platform and technicians, and the equipment runs stably.
      • Automatic temperature monitoring, automatic cooling and automatic washing can be realized.
      • The electrical system of the equipment is fully equipped with complete piping, excellent performance, and reliable operation. Both the software and hardware of this machine are independently developed by our company.
       


       
    • Applicable materials include:
      • Silicon-based materials (Si, a-Si, poly Si)
      • III-V materials (GaAs, InP, GaSb, etc.)
      • Third generation semiconductor materials (SiC, GaN, etc.)
      • Infrared materials (CZT, MCT, etc.)
      • Photoelectric materials (LiNbO₃, LiTaO₃, SiO₂, etc.)
      • Metallic materials (Au, Cu, Al, Mo, TC4, etc.)
    • The scope of application includes:
      • MEMS
      • Semiconductor devices
      • Semiconductor substrate
      • Encapsulation
    Project Parameter
    Power supply: 220-240v 10A
     
    Ambient temperature: 20°C ± 5°C
    Ambient humidity: < 80%
    Wafer size: 4”、6”、8”/ 200mm
    Working plate diameter: 520mm
    Driven jig rotation: 0-90rpm
    Plate speed: 0-120rpm
    Timing: 0-10 hours
    Feed channel: ≥ 2

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