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HOME > Product > Bonding Unit > WBS400 > WBS400 Wafer Substrate Bonding Unit

WBS400 Wafer Substrate Bonding Unit

The WBS series of wafer substrate bonding equipment is developed by MCF Company for high-precision semiconductor wafer sample  and float glass substrate bonding process, complete automatic bonding operation, equipped with vacuum and pressure bonding units. Easy to operate, high quality to achieve bonding process.
 

  • Functional Feature Description
  • Technical Application
  • Equipment Parameter
    • ● Independent control system, the whole machine anti-corrosion.
      ● The device uses touch screen operation interface, and is equipped with process menu storage memory function.
      ● The device is equipped with one or three workstations, suitable for fully automated bonding operation of wafers up to 150mm and below, with vacuum and pressure bonding units.
       
    • ● All workstations of the equipment adopt the design of air bag type double chamber, the lower layer is vacuumed, the upper layer is pressurized, providing stable and consistent bonding thickness and good dimensional accuracy. The flexible diaphragm ensures that the wafer is evenly pressed against the wax layer and provides a cushioned area to protect the wafer.
      ● The equipment is equipped with sample templates to ensure sample stability and consistency.
       
    • ● Automatic operation of the whole bonding process, through the touch screen setting the required bonding temperature and vacuum requirements and other parameters. Heating up, the temperature can be freely adjusted up to 200℃, vacuum unit evacuation, air bag pressure bonding, cycle cooling and other processes, the whole process is about 15-30 minutes to complete (process time depends on materials, different materials bonding wax and other factors).
      ● The device is configured with a memory recall function, which allows preset programs to be stored in the device and directly recalled when used again.
    • Applicable materials include:
      • Silicon-based materials (Si, a-Si, poly Si)
      • III-V materials (GaAs, InP, GaSb, etc.)
      • Third generation semiconductor materials (SiC, GaN, etc.)
      • Infrared materials (CZT, MCT, etc.)
      • Photoelectric materials (LiNbO₃, LiTaO₃, SiO₂, etc.)
      • Metallic materials (Au, Cu, Al, Mo, TC4, etc.)
    • The scope of application includes:
      • MEMS
      • Semiconductor devices
      • Semiconductor substrate
      • Encapsulation
    Project Parameter
    Power supply: 220-240v 10A
    110v 10A
    50-60HZ
     
    Ambient temperature: 20℃±5℃
    Ambient humidity: < 80%
    Wafer size: 6”x 1/2/3
     

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