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HOME > Product > Chemical Mechanical Polishing  > ACP800 > ACP800 Precision CMP Equipment

ACP800 Precision CMP Equipment

Chemical Mechanical Polishing (CMP), one of the key process steps in wafer manufacturing, is a synergistic combination of chemical etching and mechanical polishing to achieve efficient removal of excess material from the wafer surface and global nanoscale flattening.
• The temperature and cooling control system continually monitor the temperature of plate
• Pneumatic cylinder pressurisation function
• End point inspection function

  • Functional Feature Description
  • Technical Application
  • Equipment Parameter
    • • The main machine and all spare parts are made of highly corrosion resistant materials, the whole machine is anti-corrosive and suitable for chemical mechanical polishing of a wide range of semiconductor materials.
      • The system is equipped with a touch screen control panel where all functional parameters can be set. The control panel is placed outside the working area and is movable, not only to adjust the distance and angle of the panel position, but also to move it backwards and forwards. This design not only prevents the splashing of abrasive fluid on the panel, which could cause corrosion of the operating system, but also adapts to different operators' habits.
      • The CMP polishing process is analyzed by the polishing state and ultimately the end point detection function, which allows the polishing plate to stop rotating even after the wafer has reached a specified thickness, enabling precise control of the final thickness of the wafer, mostly for processes such as planarization.

       

    • • The End Point Detection (EPD) allows real-time monitoring during the polishing process without the need to stop and measure during the process. The end-point detection system monitors the main parameters of the machine host during the process. When the machine successfully reaches the desired end point, a buzzer sounds and the EPD system automatically aborts the planarization operation. Alternatively, the end-point detection system can be used as a safety device, so that if a change in the monitored process parameters is detected, the EPD triggers an alarm to prevent overpolishing.
      • Any deviation from preset process parameters during planarization and delamination will result in program interruption. The control panel automatically skips the process to the final polishing step, lifting the polishing head containing the wafer or IC from the polishing pad to prevent any unnecessary damage.
    • • The ACP800 series with a combination of automated parameter control and unique material handling versatility. The ACP automated polishing machine offers repeatable accuracy on the nanometre scale for the processing of many materials used in current device manufacturing. Due to its precision, low cost and ease of use, the ACP series of automated polishing machine provides the ideal environment for CMP applications.
      • The touch screen programmable operation panel can store independent material handling programs. Optionally, it can be increased to more than 50 groups. Automation, repeatability, flattening and retarding of integrated circuits, multiple and separate sample and wafer, can all be achieved through control panel Settings.
      • The ACP800 jig is available for 8-inch wafer and sample heads. Once the wafer is attached to the polishing head, the pressure load can be easily set via the touch screen. This can ensure the smoothness of polishing on the wafer surface, and finally realize the CMP process.
    • Applicable materials include:
      • Silicon-based materials (Si, a-Si, poly Si)
      • III-V materials (GaAs, InP, GaSb, etc.)
      • Third generation semiconductor materials (SiC, GaN, etc.)
      • Infrared materials (CZT, MCT, etc.)
      • Photoelectric materials (LiNbO₃, LiTaO₃, SiO₂, etc.)
      • Metallic materials (Au, Cu, Al, Mo, TC4, etc.)
    • The scope of application includes:
      • MEMS
      • Semiconductor devices
      • Semiconductor substrate
      • Encapsulation
    Project Parameter
    Power supply: 220-240v 10A
    Ambient temperature: 20°C ± 5°C
    Ambient humidity: < 80%
    Wafer size: 8”/ 200mm
    Working plate diameter: 780mm
    Driven jig rotation: 0-90rpm
    Plate speed: 0-120rpm
    Timing: 0-10 hours
    Feed channel: ≥ 2

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