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HOME > Product > Chemical Mechanical Polishing  > CDP400 > CDP400Precision CMP Equipment

CDP400Precision CMP Equipment

• Suitable for wafers of various sizes including 1 ", 2", 3 ", and 4"
• Polishing head speed 0-80rpm, polishing disc speed 0-80rpm
• Can achieve 4-zone partition control
• Pressure control accuracy of 0.1 PSI, maximum pressure of 5 PSI
• Equipped with disk temperature monitoring and automatic flushing function, the equipment comes standard with a polishing cloth repair uni

 

  • Functional Feature Description
  • Technical Application
  • Equipment Parameter
    • • The device is flexible and can support multiple heads.
      • The equipment's process capability is close to the mainstream model • level of products of the same size.
      • Good process consistency between device chips.
      • 1-4 inch Si, TSV, TGV polishing and surface polishing of compounds such as SIC, LT, GaAs, etc.
      • The polishing heads configured for this device are all independently developed, designed, and produced by our company.
      • The 4-inch 4-cavity Head is a unique product created by our company, filling the gap of no multi cavity 4-inch Head in China. Our company can quickly modify or customize the Head according to the characteristics of the customer's product. In the development of TGV thin film (200um) products, our company modified the internal structure of the head to meet the needs of thin film polishing. For example, during the development of LN surface OX polishing process, our company deeply upgraded the 4-inch head and successfully met the customer's product requirements.
    • • The equipment adopts friction and optical endpoint detection methods, which can be used for various CMP applications.
      • 4 pressurized areas for polishing heads
      • The maximum processing capacity is four inches, which helps to achieve wafer processing of different sizes
      • Speed stability ≤ 0.5rpm@50rpm
      • High precision control of air pressure, our company integrates mainstream domestic air pressure control modules (UPA) and our self-developed algorithms to achieve high-precision control of the internal air pressure of the Polisher Head.
      • Rated torque ≥ 45N · m
      • Rated speed ≥ 80rpm
      • High precision control of speed and acceleration/deceleration. The speed control during CMP operation also has an impact on the product. We have jointly developed a servo system for semiconductor CMP scenarios with a well-known domestic motor supplier and successfully applied it to our machine platform.
    • • High-beat machine scheduling scheme. In the design and planning of the machine, we formulated the high-beat operation scheme of the machine, and the project was implemented in accordance with the high-beat operation scheme.
      • The equipment has strong process capability and can provide customers with overall process solutions. Our company has been working in the field of CMP polishing for many years, with a complete process platform and technicians, and the equipment runs stably.
      • Automatic temperature monitoring, automatic cooling and automatic washing can be realized.
      • The electrical system of the equipment is fully equipped with complete piping, excellent performance, and reliable operation. Both the software and hardware of this machine are independently developed by our company.
    • Applicable materials include:
      • Silicon-based materials (Si, a-Si, poly Si)
      • III-V materials (GaAs, InP, GaSb, etc.)
      • Third generation semiconductor materials (SiC, GaN, etc.)
      • Infrared materials (CZT, MCT, etc.)
      • Photoelectric materials (LiNbO₃, LiTaO₃, SiO₂, etc.)
      • Metallic materials (Au, Cu, Al, Mo, TC4, etc.)
    • The scope of application includes:
      • MEMS
      • Semiconductor devices
      • Semiconductor substrate
      • Encapsulation
    Project Parameter
    Power supply: 220-240v 10A
    Ambient temperature: 20°C ± 5°C
    Ambient humidity: < 80%
    Wafer size: 1”2”3”4”
    Working plate diameter: 254mm
    Driven jig rotation: 0-80rpm
    Plate speed: 0-80rpm
    Timing: 0-10小时
    Feed channel: ≥ 2

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