Silicate wafer lapping and polishing solutions

客户样品初始状态：

材料：硅酸盐晶圆；尺寸：6寸；形状：圆形；厚度：1000um；粗糙度：650nm；TTV：40um

加工后指标要求：

厚度：300±5um；粗糙度：≤2nm；TTV：≤8um；无划痕及损伤

工艺解析：

Step1Coarse lapping stage: Using our GNAD-E series glapping and polishing machine, equipped with grooved cast iron lapping disc, lapping pressure 40–80g/cm², rotation speed 25–50 rpm, using diamond slurry (particle size 5–20μm) as lapping slurry for rapid thickness removal

Step2Fine lapping stage: Based on Step 1, the diamond slurry (particle size 1–5 μm) is replaced with a lapping slurry, and the layer thickness of the damaged layer and crush damaged layer is reduced

Step3 Rough Throwing Stage: Using our GNAD-E series lapping and polishing machine, equipped with stainless steel polishing disc combined with rigid foamed polyurethane polishing pad, using alumina slurry (particle size 1-3um), pressure to 30-60g/cm², speed 30-60 rpm, can further reduce the damage layer, and achieve surface roughness Ra ≤10nm

Step4 Fine Polishing Stage: Based on Step3, replace the alumina polishing slurry (particle size 0.2-1 μm) with the polishing slurry, and the final surface Ra ≤ 0.5nm

Case supporting host and consumables:GNAD-E series lapping and polishing machine, grooved cast iron lapping disc, stainless steel polishing disc, AMS series gluing machine, diamond slurry, alumina lapping powder and foamed polyurethane polishing pad

Customer Feedback:The scientific use of the process route and the stable operation process of the equipment have greatly improved the efficiency of material research and development.