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磷化铟单晶片抛光工艺研究,其抛光片的表面质量对后续的外延及器件性能有着重要的影响
来源:电子工艺技术 磷化铟晶体材料具有高的电场漂移速度、良好的热导特性和较强的抗辐射能力等优点,适合于制造高频、高速和低功耗微波器件和电路,在光纤通讯领域,磷化铟也是首选的通讯材料,其中半绝缘磷化铟衬底主要应用于光电集成电路(OEIC)、高电...
蓝宝石晶片加工中的技术关键-抛光工艺
来源:人工晶体学报 目前,蓝宝石抛光行业主流采用的仍是纳米二氧化硅作为抛光液,最后得到抛光表面的粗糙度(Ra,原子力显微镜测试)均在0.3nm以下。在抛光过程中,二氧化硅抛光液与蓝宝石表面的反应如下式所示,产物是硅酸铝的二水化合物。Al2O3+2SiO2...
铌酸锂晶体的研磨损伤层研究
来源:万方数据 Improving the processing efficiency of lapping and polishing is a common concern. Because the processing time of lapping and polishing is very long, the amount of removal per unit time is very small, and the surface roughness of the previous process has a great influence on the machining allowance of the later process. In this case, the high efficiency of a single process does not guarantee the overall high efficiency of the entire process. This paper proposes a new idea...
半导体材料的抛光方法、用于锑化镓衬底抛光的抛光液
本文内容摘取于苏州焜原光电有限公司,发明专利申请文件。(54)发明名称半导体材料的抛光方法、用于锑化镓衬底抛光的抛光液(57)摘要本发明是针对采用现有技术CMP工艺对锑化镓等较软的半导体材料抛光时抛光磨料、抛光液中含有的金属离子等易附着在被抛光物的...
金刚石RA抛光到0.5nm,TTV±1um需要什么工艺和设备
将金刚石(RA)抛光到表面粗糙度0.5nm,并确保其总厚度变化(TTV)控制在±1um以内,需要高度精密的工艺和专用设备。以下是实现这一目标的工艺和设备概述:### 工艺步骤1.准备工作:将金刚石样品固定在抛光夹具上,确保样品表面平整且与抛光垫接触良好。...
How to ensure the consistency of the removal efficiency of the two materials during the lapping process of TSV through-silicon via
In the lapping process of TSV (Through-Silicon Via) process, ensuring the consistent removal efficiency of the two materials (such as silicon substrate and overlay material) is a key link to ensure the quality and process stability of the final product.以下是一些实现这一目标的方法和策略:1. Precise control of lapping parameters lapping pressure and speed: By precisely adjusting the pressure...

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